Solution-Processed High-k Dielectric, ZrO2, and Integration in Thin-Film Transistors

摘要

We report a sol–gel method to deposit a high-k dielectric, zirconium oxide (ZrO2). This solution-based approach has advantages of easy processing and low fabrication cost. Effects of annealing temperatures on dielectric properties, such as tunneling current density and capacitance density, are reported. Morphological and chemical characterizations suggest that the process temperature can be kept at or below 300°C. We have employed the solution-processed ZrO2 dielectric in a zinc tin oxide thin-film transistor. Saturation mobility of 4.0 cm2/V s at operating voltage of 2 V has been observed. The measured subthreshold swing is 74 mV/decade, which is the result of the combination of an electronically clean dielectric/semiconductor interface and high insulator capacitance.