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首页> 外文期刊>Journal of Crystal Growth >Preparation and characterization of wire-like Sb_2Se_3 and flake-like Bi_2Se_3 nanocrystals
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Preparation and characterization of wire-like Sb_2Se_3 and flake-like Bi_2Se_3 nanocrystals

机译:线状Sb_2Se_3和片状Bi_2Se_3纳米晶体的制备与表征

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摘要

Crystalline Sb_2Se_3 and Bi_2Se_3 have been prepared through the reaction between SbCl_3 (or BiCl_3) and elemental selenium using sodium sulfite as a reducing reagent. TEM images show that the as-prepared Sb_2Se_3 comprise uniform nanowires, while Bi_2Se_3 crystals exhibit a hexagonal flake-like morphology. The optical absorption of the products has been investigated, and the optical band gap energy for direct transition in Sb_2Se_3 nanowires is found to be 1.46 eV. The composition of the as-prepared products has been identified by XPS. The reaction mechanism is discussed in detail, and it is proposed that the oriented growth behavior of Sb_2Se_3 and Bi_2Se_3 crystals is determined by their cleavage nature. The chain-like arrangement of Sb and Se atoms parallel to the c-axis in the orthorhombic lattice and the two-dimensional assembly of Bi and Se atoms perpendicular to the c-axis in the hexagonal cell contribute to the formation of wire-like Sb_2Se_3 and flake-like hexagonal Bi_2Se_3 crystals, respectively. These arguments can also be applied to explain the growth behavior of other Ⅴ_2Ⅵ_3-type crystals.
机译:使用亚硫酸钠作为还原剂,通过SbCl_3(或BiCl_3)与元素硒之间的反应制备了Sb_2Se_3和Bi_2Se_3晶体。 TEM图像显示,所制备的Sb_2Se_3包含均匀的纳米线,而Bi_2Se_3晶体表现出六边形的薄片状形态。已经研究了产物的光吸收,发现在Sb_2Se_3纳米线中直接跃迁的光学带隙能量为1.46 eV。 XPS已确定了所制备产品的组成。详细讨论了反应机理,并提出了Sb_2Se_3和Bi_2Se_3晶体的取向生长行为取决于其裂解性质。 Sb和Se原子在正交晶格中平行于c轴的链状排列以及Bi和Se原子在六边形单元中垂直于c轴的二维组装有助于形成线状Sb_2Se_3和片状六角形Bi_2Se_3晶体。这些论点也可以用来解释其他Ⅴ_2Ⅵ_3型晶体的生长行为。

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