首页> 外文期刊>Journal of Crystal Growth >A three-dimensional numerical simulation study of the Marangoni convection occurring in the crystal growth of Si_xGe_(1-x) by the float-zone technique in zero gravity
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A three-dimensional numerical simulation study of the Marangoni convection occurring in the crystal growth of Si_xGe_(1-x) by the float-zone technique in zero gravity

机译:Si_xGe_(1-x)晶体生长中零重力下Marangoni对流的三维数值模拟研究

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摘要

A numerical simulation study was carried out to examine the effect of solutal Marangoni convection during the Si_xGe_(1-x) crystal growth by the floating-zone (FZ) technique under zero gravity. In this study, a three-dimensional full-zone configuration for the FZ was considered. Computational results show that the contribution of the solutal Marangoni convection to the flow structure was significant although the strength of the solutal Marangoni convection is much weaker than that of the thermal Marangoni convection. Application of a crystal and feed rotation with an optimum rate induces a good mixing in the melt and leads to crystals with a uniform concentration distribution along the growth interface.
机译:进行了数值模拟研究,以研究零重力下Si_xGe_(1-x)晶体生长过程中溶质Marangoni对流的影响。在这项研究中,考虑了FZ的三维全区配置。计算结果表明,尽管Marangoni对流的强度比热Marangoni对流的强度要弱得多,但Marangoni对流对流动结构的贡献却是显着的。施加晶体并以最佳速率旋转进料会在熔体中产生良好的混合,并导致晶体沿生长界面具有均匀的浓度分布。

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