Thermodynamic analysis of the Ga-In-As-Sb-C-H system

摘要

The Ga-In-As-Sb-C-H system composed of 8 phases and 74 gaseous speices is set up and analyzed thermodyn-amically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga, In)(As, Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defiend according to the practical MOVPE processes. The experimental data are collected and compared with the calculated results.