Study on silicon melt convection during the RF-FZ crystal growth process II. numerical investigation

摘要

Silicon melt convection during the floating zone (FZ) crystal growth process under radio-frquency (RF) heating and the effect of the externally applied magnetic filed on the RF-FZ silicon melt convction have been investigated numerically. The main purpose of the study is to clarify the characteristics of the silicon melt convection under the RF heating and the effect of externally applied magnetic field on such melt convection. The unmerically obtained flow characteristics are almost the same as previously reported experimental results.