Heteroepitaxial growth of {1 1 1}-oriented diamond films on platinum{1 1 1}/sapphire{0 0 0 1} substrates

摘要

By microwave enhanced chemical vapor deposition,{1 1 1} -oriented diamond films were heteroepitaxially grown on platinum{1 1 1} films of 4 μm thickness which were sputter-deposited at 600℃ on sapphire{0 0 0 1}. It was found that X-ray diffraction rocking curve of diamond{1 1 1} has a full-width at half maximum value of 2.0°The films have an intensively coalesced smooth surface consisting of azimuthally aligned diamond{1 1 1}. It was also found using Raman spectroscopy that the diamond films have unexpectedly small residual stress, which is considered to be a major reason why the diamonds are successfully grown without crack or delamination over the entire surface of substrates. While the sample area in this study is only 5 × 10 mm~2, the present achievements opened a path towards fabrication of large-area single crystal diamond films as sapphire substrates are commercially available in several inches of diameter