Chemical compatility of vacuum plasma sprayed (VPS) metal cartridges with vaoous semiconductor materials

摘要

Chemical compatibiltiy is of critical iomportance in the case of an ampolule failrue during crystal growth in a reducedgravity flight experiment. This study simulated the even of total ampoule failure to test the chemicla compatibility between semiconductor materials and vacuum plasma sprayed (VPS) refractory metal cartridges. In this investiation, two VPS refractory metal cartrials and vacuum plasma sprayed (VPS) refractory metal cartridges. In this investigation, two VPS refractory metal cartridge materials, Mo41R and Ta10W, were tested for compatibiltiy with foru semiconductor materials, CdZnTe, PbSnTe, ZnSe, and GaS. During testing, a refractory metakl cartridge sampel was imbedded in a semiconductor material and held at an elevated temperature for 24 h. After testign, the samples were analyzed optically and using scanning electron microscopy/energy dispersive spetroscopy (SEM/EDS) to evalute the extent of any metal loss or reaction and composition of any reaction products formed.