Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb

摘要

The growth of dilute nitride alloys of GalnSb by plasma-assisted molecular beam epitaxy is reported. The principle of lattice matching GaInNSb alloys to GaSb(001) substrates is demonstrated. High resolution X-ray diffraction rocking curves and reciprocal space maps indicate the high crystalline quality of the GalnNSb layers and illustrate a lattice match to GaSb with nitrogen and indium incorporations of 1.8% and 8.4%, respectively. The rms roughness of a nominally lattice matched GaInNSb/GaSb(001) layer was determined from atomic force microscopy to be ～1.8 nm.