机译:低压HVPE初始阶段对r面蓝宝石上非极性α面AlN晶体质量的影响
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
Department of Electrical and Electronics Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan;
A1. Buffer; A1. In-plane anisotropy; A1. Nitridation; A1. Nonpolar; A3. Hydride vapor phase epitaxy; B2. α-planeAlN;
机译:LP-HVPE对r面蓝宝石的切角对非极性a面AlN晶体质量的影响
机译:AlN缓冲层厚度对R平面蓝宝石基板上生长的10-PRRS厚的A平面ALN薄膜结晶和表面形态的影响
机译:r面蓝宝石衬底上生长的非极性a面GaN的晶体质量和表面形态的改善
机译:MOCVD在R面蓝宝石上生长的非极性飞机GAN薄膜的影响
机译:在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
机译:HVPE在r面蓝宝石上生长的a面GaN模板中深陷阱能级的电子状态
机译:通过HVPE生长的R面蓝宝石对1000℃的生长温度和V / III比率的影响