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Growth mechanism of nanorods in REBa_2Cu_3O_y films (RE: rare-earth element)

机译:REBa_2Cu_3O_y薄膜中纳米棒的生长机理(稀土元素:稀土元素)

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摘要

Critical current density under magnetic fields has been improved by the introduction of artificial pinning centers. Nanorods in REBa_2Cu_3O_y films are significantly effective as c-axis-correlated pinning centers. However, nanorods sometimes tilt from the c-axis direction of superconducting films. To understand the mechanism of nanorod tilting, ErBa_2Cu_3O_y films containing Ba(Nb_(0.5)Er_(0.5))O_3 (BNO) nanorods were deposited on a SrTiO_3 single crystal with a vicinal surface. Microstructures of the nanorods were examined by transmission electron microscopy (TEM). As a result, it was found that BNO nanorods grew diagonally from steps of the substrate surface in cross-sectional TEM images. The mechanism of the diagonal growth of nanorods can be explained by the segregation coefficient.
机译:通过引入人工钉扎中心,可以改善磁场下的临界电流密度。 REBa_2Cu_3O_y薄膜中的纳米棒作为与c轴相关的钉扎中心非常有效。但是,纳米棒有时会从超导膜的c轴方向倾斜。为了了解纳米棒倾斜的机理,将含有Ba(Nb_(0.5)Er_(0.5))O_3(BNO)纳米棒的ErBa_2Cu_3O_y膜沉积在具有相邻表面的SrTiO_3单晶上。通过透射电子显微镜(TEM)检查了纳米棒的微观结构。结果,发现在横截面TEM图像中,BNO纳米棒从基板表面的台阶对角地生长。纳米棒对角线生长的机理可以通过偏析系数来解释。

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  • 来源
    《Journal of Crystal Growth》 |2010年第20期|p.2914-2918|共5页
  • 作者单位

    Central Research Institute of Electric Power Industry, Electric Power Engineering Research Laboratory, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan;

    rnKyushu University, 744 Motooka, Nishi-ku, Fukuoka, Fukuoka 819-0395, Japan;

    rnKyushu University, 744 Motooka, Nishi-ku, Fukuoka, Fukuoka 819-0395, Japan;

    rnKochi University of Technology, Tosayamada, Kochi 782-8502, Japan;

    rnShizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan;

    rnKyushu Institute of Technology, 1-1 Sensui-cho Tobata-ku, Kitakyushu 804-8550, Japan;

    rnNagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Nanostructures; A1. Segregation; A1. Transmission electron microscopy; A3. Pulsed-laser deposition process; B2. Oxide superconducting films;

    机译:A1。纳米结构;A1。隔离;A1。透射电子显微镜;A3。脉冲激光沉积工艺;B2。氧化物超导膜;

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