Crystal growth of CW diode-pumped (Er~(3+) ,Yb~(3+)):GdAl_3(BO_3)_4 laser material

摘要

Phase relationships in the Er:Yb_xGd_(1-x)Al_3(BO_3)_4-K_2Mo_3O_(10)-B_2O_3-(Gd,Er,Yb)_2O_3 (x=0-0.2, Er-1 at%) system were studied in the temperature range from 1150 to 900℃. Multicomponent melts of 55 mol %K_2Mo_3O_(10)-45 mol% B_2O_3 (Ⅰ) and 55 mol% K_2Mo_3O_(10)-40 mol% B_2O_3-5 mol% (Gd,Er,Yb)_2O_3 (Ⅱ) were suggested as reasonable fluxes for high-temperature solution growth of (Yb~(3+),Er~(3+)):GdAl_3(BO_3)_4 single crystals. Yb_(0.15)Gd_(0.85)Al_3(BO_3)_4 solubility in the complex flux of Ⅱ composition has been found as varying from 17 to 9.5 mol% with decreasing temperature in the interval of 1000-800℃ As a result, (Er.Yb): GdAB single crystals with high optical quality and sizes up to 20×10×10 mm were grown on dipped "point" seeds. Absorption and stimulated emission spectra, emission lifetimes, and efficiencies of energy transfer from Yb~(3+) to Er~(3+) ions were determined. Highly efficient continuous-wave diode-pumped laser operation of (Er,Yb):GdAl_3(BO_3)_4 crystal was realized.