The growth defects in Czochralski-grown Yb: YAG crystal

摘要

The growth defects in Yb:YAG crystals were investigated by transmission synchrotron topography and chemical etching. The etch pit patterns on three low-index planes (1 1 1), (1 1 )0) and (2 1 1) were obtained. It was found that growth striations, core and dislocations were themain defects in Yb: YAG crystal. The dilsocatios in Yb:YAG mainly originated from seed, impurity particles and inclusions, and seed-crystal interfaces in the initial growth period. The dislocations usualy propagate along a path perpendicular to the growth interface. Therefore, in Yb:YAG crystals grown with a convex solid-liquid interface, the dislocations will be decreased or eliminated.