ZnSe: Sb/ZnSe: Cl heteroepitaxial LED grown by MOVPE

摘要

The MOVPE growth of blue-emitting devices based on ZnSe is mainly hindered by the lack of sufficient p-type doping. We have used the Sb precursor trisdimethylaminoantimony (TDMASb) for antimony doping of ZnSe in our MOVPE growth process. ZnSe: Sb layers showing p-type conductivity as well as ZnSe: Sb/ZnSe: Cl p-n junction diodes were deposited on p-type GaAs:Zn substrates. The diode structures show blue electroluminescence under forward bias. Photoluminescence at T_(PL) = 16 K and electroluminescence in the temperature range of T_(EL) = 16-300 K were measured.