Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

摘要

Undoped ZnO films were deposited on (0 0 1) silicon substrate by radio frequency (RF) magnetron sputtering. It was found that these properties strongly depended on frequency and O_2/Ar gas flux ratio (expressed by k) during the sputtering. The X-ray diffraction patterns of the samples showed sharp diffraction peaks for ZnO (0 0 2), which indicate that the as-sputtered flims were highly c-axis oriented. The band edge emission was observed in photoluminescence spectra at room temperature. The samples grown under certain conditions could generate stronger luminescence of ZnO.