Effect of lateral strain on gate induced control of electrical conduction in single layer graphene device

摘要

We study numerically the effect of various types of in-plane strain on the electronic transport property in the single layer graphene connected to two metallic electrodes, with the special attention to the dependences on the gate voltage, channel length, the type of strain, and the strength of the strain. Our calculations have shown that the combination of the shear and the armchair-directional strain can be used to obtain a clear threshold behavior in the gate voltage dependence of the current as expected from the previously reported strain induced bandgap opening. Moreover, we predict the strain induced increase of the current density for small strain regime.