Analytical model for quasi-ballistic transport in MOSFET including carrier backscattering

摘要

In this paper, a charge-based analytical model is proposed for double-gate MOSFETs working in the quasi-ballistic regime. The model includes both Lundstrom backscattering theory and conventional drift-diffusion theory. Both the theories are used to model the charge density along channel length, which are used to solve Poisson's equation to get the variation of the channel potential. To compute the ballistic segments and diffusive segments of the current, the calculated charge density and surface potential are used. The model is validated with reported numerical data of different channel length and found to be accurate.