机译:核心栅极厚度和GE含量变化对Si_(1-x)Ge_x源/漏极Si-Nanotube JLFET性能的影响
Natl Inst Technol Elect & Commun Engn Dept Hamirpur 177005 HP India;
Natl Inst Technol Elect & Commun Engn Dept Hamirpur 177005 HP India;
DIBL; Junctionless (JL) FET; Nanotube; Short-channel effects; Surface potential; Threshold voltage roll-off;