首页> 外文期刊>Journal of the Communications Research Laboratory >SUPERCONDUCTING SNS DEVICES FOR ULTRA-HIGH-SPEED COMMUNICATIONS
【24h】

SUPERCONDUCTING SNS DEVICES FOR ULTRA-HIGH-SPEED COMMUNICATIONS

机译:超高速通信的超导SNS设备

获取原文
获取原文并翻译 | 示例
           

摘要

We have studied negative-resistance mixers both theoretically and experimentally. The current carried by the bound quasi-particles in the N-region of a mesoscopic SNS weak link has both DC and cosine components. Current transport in SNS weak links has been shown in many experiments to be affected by bias voltages. The I- V curves often show complex structures, including negative differential resistance which cannot be explained using the simple RSJ model. Supercurrent is directly affected by both the bias voltage and the density of states at the superconductor energy gap. The supercurrent as described by the Multip1e-Andreev-Reflection formula is varies markedly across subharmonic gap voltages because of the singularity of the density of state of superconductors near the energy gap. We have carried out mixer experiments on SNS weak links and have observed IF peaks at subgap voltages which are caused by the negative differential resistance.
机译:我们已经在理论上和实验上研究了负电阻混频器。在介观SNS弱连接的N区域中,结合的准粒子所携带的电流同时具有DC和余弦分量。 SNS薄弱环节中的电流传输已在许多实验中显示出受到偏置电压的影响。 I-V曲线通常显示复杂的结构,包括负差分电阻,这无法使用简单的RSJ模型来解释。超电流直接受超导体能隙处的偏置电压和状态密度的影响。由Multip1e-Andreev-Reflection公式描述的超电流在次谐波间隙电压之间发生显着变化,这是因为在能隙附近超导体的状态密度奇异。我们已经对SNS薄弱环节进行了混频器实验,并观察到由负差分电阻引起的亚间隙电压处的IF峰值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号