首页> 外文期刊>Journal of the Chinese Chemical Society >Syntheses, Crystal Structures, Resistivities and Electronic Structures of Hf_5Al_(3-x)Sb_x (x = 0.70,1.44,2.14)
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Syntheses, Crystal Structures, Resistivities and Electronic Structures of Hf_5Al_(3-x)Sb_x (x = 0.70,1.44,2.14)

机译:Hf_5Al_(3-x)Sb_x(x = 0.70,1.44,2.14)的合成,晶体结构,电阻率和电子结构

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摘要

Three new hafnium aluminum antimonides Hf_5Al_(3-x)Sb_x (x = 0.70, 1.44,2.14) were synthesized from pure elements in an arc-melting reaction; structures were solved from the X-ray diffraction data of single crystals. Al and Sb mixing produced two homogeneity ranges; the Mn_5Si_3 structural type was homogeneous for 0 ≤x ≤ 1.0, and the W_5Si_3 structure covered the range 2.0 ≤x ≤2.5. Both structures are condensations of two polyhedrons stacked along the c-axis. Calculations of the electronic structures revealed substantial contributions from Hf-Sb interactions; heteroatomic bonding in Hf-Al and Hf-Sb contacts affected the stabilities of these two phases. Measurements of the resistivity of polycrystalline samples revealed a dependence on temperature, indicating metallic behavior, consistent with the results of our calculations.
机译:在电弧熔化反应中,由纯元素合成了三种新的anti铝锑化物Hf_5Al_(3-x)Sb_x(x = 0.70,1.44,2.14);从单晶的X射线衍射数据解析结构。铝和锑的混合产生两个同质范围; Mn_5Si_3的结构类型在0≤x≤1.0时是均匀的,而W_5Si_3的结构类型在2.0≤x≤2.5的范围内。两种结构都是沿c轴堆叠的两个多面体的缩合。电子结构的计算表明,Hf-Sb相互作用起了重要作用。 Hf-Al和Hf-Sb接触中的杂原子键会影响这两相的稳定性。多晶样品电阻率的测量表明温度与温度有关,表明金属行为,与我们的计算结果一致。

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