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Effect of Dislocations on the Thermal Conductivity of Lithium Fluoride

机译:位错对氟化锂导热系数的影响

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Measurements of the thermal conductivity K of Harshaw LiF crystals were made over the temperature range 2°–100°K. A freshly cleaved crystal exhibited K values in agreement with the measurements of Berman, Foster, and Ziman (1956). Annealing raised the maximum K by a factor of two. Dislocations were added by compression, and the dislocation density was determined by the methods of Gilman and Johnston. The K values below 30°K for the deformed specimens were approximately proportional to T2, in agreement with Klemens'' theory, but the reduction in K by introduction of dislocations was much larger than Klemens'' predictions. The phonon mean free path when limited by dislocation scattering was found to be approximately (4×106)/DT, where D is the number of dislocation lines/cm2 and T is the absolute temperature.
机译:Harshaw LiF晶体的导热系数K的测量是在2°–100°K的温度范围内进行的。新鲜切割的晶体显示出与Berman,Foster和Ziman(1956)的测量值一致的K值。退火将最大K增加了两倍。通过压缩添加位错,并通过Gilman和Johnston的方法确定位错密度。符合Klemens的理论,变形样品的低于30°K的K值大致与T2成正比,但是引入位错导致的K降低远大于Klemens的预测。发现当受位错散射限制时,声子平均自由程约为(4×106)/ DT,其中D为位错线数/ cm2,T为绝对温度。

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    《Journal of Applied Physics 》 |1959年第3期| 共4页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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