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Secondary Positive Ion Emission from a Tantalum Surface

机译:钽表面的二次正离子发射

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摘要

The secondary positive ions ejected from a tantalum target by a mass‐analyzed primary beam were detected and studied in a mass spectrometer. The secondary ion emission consisted of species characteristic of the metal (Ta+), metal compounds (oxides), and multiatomic ions of the metal (Ta2+, Ta3+). Reflection of normally incident gas ions from the Ta surface was not observed; the specular reflection coefficient of ions to ions is then less than 10-6. The relative secondary ion yields for tantalum, measured for normally incident Hg202 ions at energies between 0.3–14 keV, were independent of the incident ion charge. A dependence of the Ta+ secondary yield on mass of the incident ion was observed. The dependence of the secondary ion yield on mass and energy of the incident ions was very similar to that observed for total sputtering yields.
机译:在质谱仪中检测并研究了通过质量分析的主射线束从钽靶射出的次级正离子。二次离子发射包括金属(Ta +),金属化合物(氧化物)和金属的多原子离子(Ta2 +,Ta3 +)的物种特征。没有观察到从Ta表面反射出垂直入射的气体离子;离子对离子的镜面反射系数则小于10-6。钽的相对二次离子产率是在0.3–14 keV之间的能量下对垂直入射的Hg202离子测量的,与入射离子电荷无关。观察到Ta +次要产率对入射离子质量的依赖性。次级离子产率对入射离子的质量和能量的依赖性与总溅射产率所观察到的非常相似。

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  • 来源
    《Journal of Applied Physics》 |1964年第3期|共4页
  • 作者单位

    General Electric Company, Knolls Atomic Power Laboratory, Schenectady, New York;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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