On the measurement of barrier height in metal‐insulator‐semiconductor (GaAs) structures by internal photoemission technique

摘要

It is shown that photoexcitation of interface states which causes nonlinearity in the Fowler plot for Au‐thin oxide‐(n)GaAs structures can be reduced by the use of a thicker (∼500 Å) Au electrode. The linearity in the Fowler plot extends over a wider range of photon energy using this scheme and this allows accurate determination of barrier height.