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Anomalous photo-thermal effects in multi-layered semi-Dirac black phosphorus

机译:多层半迪拉克黑磷中的异常光 - 热效应

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The multi-layered potassium-doped black phosphorus (BP) is a gapped semi-Dirac two-dimensional normal insulator (NI), and can be transformed into a time-reversal symmetry broken Chern insulator (CI) through photo-excitation with a high-frequency photon beam. This transition from an NI to CI, modeled within the Floquet theory of periodic perturbations, introduces non-trivial topological features to BP dispersion manifesting in a finite Berry curvature (Ω). We utilize Ω, the dispersion-governed internal momentum-dependent magnetic field, in conjunction with a longitudinal temperature gradient to examine a pair of anomalous thermoelectric effects which pertain to the transverse heat flow in BP in the CI phase in the absence of an external magnetic field. The anomalous variants of the Ettinghausen (EE) and Righi-Leduc effects (RLE) are quantitatively analyzed via their respective coefficients in this work. The strength of anomalous EE and RLE coefficients is found to be a direct outcome of the sum of Berry curvatures over the occupied bands and is shown to drop as the Fermi level (μ) is positioned high in the conduction states or deep in the valence region. In contrast, for a μ placed in the bandgap, much larger values of the coefficients are predicted. The position of μ and the strength of Ω serve as effective regulators for the EE and RLE coefficients. Finally, we point out how beyond the role of Ω and μ, several laboratory accessible methods can be utilized to modulate the EE and RLE coefficients, including an application of strain, variations in dopant concentration, and the energy fluence of incident radiation.
机译:多层钾掺杂的黑色磷(BP)是一款覆盖半导体二维正常绝缘体(Ni),并且可以通过高度的光激发转换成时间反转对称破碎的Chern绝缘体(CI) - 频率光子束。从周期性扰动的Floquet理论内建模的这种从NI到CI的转变引入了在有限浆果曲率(ω)中的BP分散体中的非普通拓扑特征。我们利用ω,分散治理的内部动量依赖性磁场,与纵向温度梯度结合,以检查一对异常的热电效应,在没有外部磁的情况下,在CI相中的横向热流中涉及横向热流动场地。通过其各自的系数在这项工作中定量地分析Ettthausen(EE)和RLE)的异常变体。发现异常EE和RLE系数的强度是占用带上的浆果曲率之和的直接结果,并且随着费米水平(μ)定位在导通状态或在价区域深处。相反,对于放置在带隙中的μ,预测系数的更大值。 μ的位置和ω的强度用作EE和RLE系数的有效调节剂。最后,我们指出了超出ω和μ的作用,可以利用几种实验室可访问方法来调节EE和RLE系数,包括施加菌株的施加,掺杂剂浓度的变化,以及入射辐射的能量流量。

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  • 来源
    《Journal of Applied Physics 》 |2021年第5期| 054303.1-054303.10| 共10页
  • 作者单位

    School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA;

    Department of Physics and Astronomy University of California Irvine California 92697 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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