An approach for fabrication of micrometer linear ZnO/Ti_3C_2T_x UV photodetector with high responsivity and EQE

摘要

Two-dimensional MXenes have shown impressive semiconductor-like properties associated with their ultrathin-atomic-layer structure. Herein, ZnO/Ti_3C_2T_x hybrid structures were fabricated by a simple dipping method. Photodetectors (PDs) made of ZnO/Ti_3C_2T_x hybrid on glass fiber exhibit significantly enhanced photodetect ability. The responsivity of ZnO/Ti_3C_2T_x PD is 5.05 A/W when illuminated by 365 nm light (0.28 mW/cm~2) at a bias of 5 V, which is 360 times that of ZnO PD (0.014 A/W). The synergistic effect of the formation of the novel heterostructure and the high conductivity of Ti_3C_2T_x played a major role in the enhanced photodetect performance. The high responsivity of 7.01 A/W and the high external quantum efficiency of 2386% for ZnO/Ti_3C_2T_x PD give it great potential for a UV light photoswitch and image sensor. This work sheds light on the utilization of two-dimensional MXene materials in high-performance optoelectronic devices.