Applications of chip-scale semiconductor metamaterials based on plasmon-induced transparency in modulation and sensing

摘要

We propose and simulate the tunable plasmon-induced transparency (PIT) phenomenon of semiconductor-based H-shaped chip-scale metamaterials. Numerical analysis shows that the PIT phenomenon is caused by the destructive interference between two bright modes, and the equivalent Lorentz model also proves its physical mechanism appropriately. In addition, in practical applications, changing the polarization angle can adjust the group delay, and the maximum group delay is 41.92 ps; changing the temperature can adjust the transmission peak frequency of the PIT effect, which can be applied to temperature sensing and thermo-optic switches. The amplitude modulation depth can reach 97.8%. The application of this chip-scale semiconductor metamaterial in modulators and sensors opens up new ways.