Microwave power dependence of the retrapping current of superconducting nanostrips

摘要

The microwave power density absorbed in the normal state by continuously irradiated superconducting Nb and NbN nanostrips is extracted from their electrical transport properties. The procedure is based on the reduction of the retrapping current (i.e., the minimum applied current required to sustain a dissipative region inside a superconducting microbridge) that results from the microwave dissipation. The power effectively absorbed by the nanostrips varies linearly with the input power level and falls in the μW/μm~(-3) range. At a given microwave frequency, the relation between the input power and the absorbed power does not depend on the coolant temperature. In addition, the upper limit of the detection range is given by the heat removal capabilities through the substrate. When the absorbed microwave power exceeds this temperature-dependent heat removal threshold, normal hotspot domains are stabilized down to zero bias current. The determination of the microwave power absorbed by superconducting samples in the normal state may be of practical interest in the field of incident power detection.