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Magnetization dynamics of a flux control device fabricated in the write gap of a hard-disk-drive write head for high-density recording

机译:用于高密度记录的硬盘驱动器写头的写入间隙中制造的磁化动态。高密度记录

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摘要

The design concept of microwave-assisted magnetic recording (MAMR) using the flux control (FC) effect has been proposed as a technology for hard disk drives (HDDs). In this type of MAMR, the magnetization of an in-gap device (FC device) is reversed against the gap field by spin-transfer torque, enhancing the amplitude and gradient of the recording field. In this paper, we study the magnetization dynamics of an FC device fabricated in the write gap of an HDD write head. The operation of the FC device is analyzed by measuring the temporal resistance change in the sub-nanosecond region. Reversal of the FC device becomes faster as the bias current is increased and can be completed by 0.5 ns after the transition of the write current. The experimental results are reproduced by micromagnetic simulations using a head model, confirming that the simulations correctly describe the magnetization dynamics of the actual device. The simulations show that the recording field gain by the FC device appears with little delay after the rise of the recording field and that the FC device operates effectively even at a fast write rate of approximately 3 Gbit/s. Furthermore, we demonstrate the effectiveness of boosting the bias current, which can realize both fast and reliable operation of the FC device. These results indicate that the FC device operates as designed and that MAMR using the FC effect is promising for extending the recording density of HDDs.
机译:已经提出了使用磁通控制(FC)效应的微波辅助磁记录(MAMR)的设计概念作为硬盘驱动器(HDD)的技术。在这种类型的MAMR中,通过旋转转移扭矩,通过旋转转换扭矩来反向间隙装置(Fc器件)的磁化,增强记录场的幅度和梯度。在本文中,我们研究了在HDD写头的写入间隙中制造的FC器件的磁化动态。通过测量子纳秒区域中的时间电阻变化来分析FC器件的操作。随着偏置电流的增加,FC器件的反转变得更快,并且在写电流的转换后可以在0.5ns之后完成0.5ns。使用头部模型通过微磁性模拟再现实验结果,确认模拟正确描述了实际设备的磁化动态。模拟表明,在记录字段的上升之后,FC设备的记录场增益几乎没有延迟,并且即使以大约3Gbit / s的快速写入速率,FC器件也有效地操作。此外,我们展示了升高偏置电流的有效性,这可以实现FC器件的快速可靠的操作。这些结果表明FC器件根据设计,使用FC效果的MAMR是有希望延长HDD的记录密度。

著录项

  • 来源
    《Journal of Applied Physics》 |2021年第10期|103901.1-103901.7|共7页
  • 作者单位

    Corporate Research and Development Center Toshiba Corporation Kawasaki 212-8582 Japan;

    Corporate Research and Development Center Toshiba Corporation Kawasaki 212-8582 Japan;

    Corporate Research and Development Center Toshiba Corporation Kawasaki 212-8582 Japan;

    Corporate Research and Development Center Toshiba Corporation Kawasaki 212-8582 Japan;

    Corporate Research and Development Center Toshiba Corporation Kawasaki 212-8582 Japan;

    Toshiba Electronic Devices and Storage Corporation Yokohama 235-8522 Japan;

    Toshiba Electronic Devices and Storage Corporation Yokohama 235-8522 Japan;

    Corporate Research and Development Center Toshiba Corporation Kawasaki 212-8582 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 23:28:52

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