The possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers

摘要

We consider the possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers at room temperature. Sufficient generation efficiency is achieved via the resonant increase of GaAs second order nonlinear susceptibility in this spectral range. The outcoupling power conversion efficiency is anticipated to be up to 4×10~(-7)W~(-1) in the laser design studied.