Monte Carlo simulation study of electron yields from compound semiconductor materials

摘要

A systematic study has been performed based on a Monte Carlo simulation for the investigation of secondary electron yields, backscattering coefficients, and total electron yields for eight compound semiconductor materials, i.e., AlN, TiN, VN, VC, GaAs, InAs, InSb, and PbS, at different incident electron energies in the range 0.1-10 keV. Our Monte Carlo simulation model is based on the Mott cross section for electron elastic scattering as calculated by a partial wave method and a dielectric functional approach to electron inelastic scattering with the full Penn algorithm. We used Palik's optical data for lower photon energies below 100 eVs and Henke's data for higher photon energies. The cascade production of secondary electrons in electron inelastic scattering and low energy is included in the simulation. The simulated results of electron backscattering coefficients are compared with the experimental data available in the literature. Considering the fact that the experimental data for these compound materials are not available, we have compared them with experimental data for elements having the nearest mean atomic numbers. The simulation predicted much larger backscattering coefficient values than the empirical Staub formula.