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First-principle investigation of the charge injection barriers of polyethylene and polytetrafluoroethylene oligomers

机译:聚乙烯和聚四氟乙烯低聚物电荷注入屏障的第一原理研究

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摘要

Experimental research has shown that much less charge injection occurs in polytetrafluoroethylene (PTFE) compared to polyethylene (PE). To clarify the mechanisms of charge injection from metals into polymer insulators, we comparatively studied charge injection in PE and PTFE oligomers using first-principles calculations. Two different models were studied: chemisorption (bonding) and physisorption (nonbonding). The results show that the electron injection barrier of the metal/PTFE interface is larger than that of the metal/PE interface only in the case of chemisorption. The larger electron injection barrier of the metal/PTFE oligomer interface is mainly affected by the positive vacuum level shift of the metal/PTFE interface induced by electron transfer from the metal to PTFE along the chemical bonds. In the case of physisorption, the hole injection barrier of the metal/PTFE interface is larger than that of the metal/PE interface. This is attributed to the larger ionization potential of PTFE compared to PE. The calculated results reasonably explain the experimental phenomena. The agreement between the experimental and calculated results verifies the rationality of our calculation models. The models used herein can likely be applied in other metal/polymer interfacial systems with acceptable accuracy.
机译:实验研究表明,与聚乙烯(PE)相比,在聚四氟乙烯(PTFE)中发生的电荷注射得多。为了澄清从金属中的电荷注射到聚合物绝缘体中的机制,我们使用一致原理计算比较研究了PE和PTFE低聚物中的电荷注射。研究了两种不同的模型:化学吸附(粘接)和理解(非粘附)。结果表明,在化学吸取的情况下,金属/ PTFE界面的电子注入屏障大于金属/ PE接口的电子注入屏障。金属/ PTFE低聚物界面的较大电子注入屏障主要受电子/ PTFE界面的阳性真空水平的影响,所述金属转移从金属转移到沿着化学键键的PTFE。在理由的情况下,金属/ PTFE接口的空穴注入屏障大于金属/ PE接口的空穴注入屏障。与PE相比,这归因于PTFE的较大电离电位。计算结果合理地解释了实验现象。实验和计算结果之间的协议验证了我们计算模型的合理性。这里使用的模型可能适用于具有可接受的精度的其他金属/聚合物界面系统。

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  • 来源
    《Journal of Applied Physics 》 |2019年第3期| 035101.1-035101.8| 共8页
  • 作者单位

    Xi An Jiao Tong Univ State Key Lab Elect Insulat & Power Equipment Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ State Key Lab Elect Insulat & Power Equipment Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ State Key Lab Elect Insulat & Power Equipment Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ State Key Lab Elect Insulat & Power Equipment Xian 710049 Shaanxi Peoples R China;

    Xi An Jiao Tong Univ State Key Lab Elect Insulat & Power Equipment Xian 710049 Shaanxi Peoples R China;

    State Grid Shaanxi Elect Power Co Elect Power Res Inst Xian 710000 Shaanxi Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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