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Effects of the interfacial charge injection properties of silver nanowire transparent conductive electrodes on the performance of organic light-emitting diodes

机译:银纳米线透明导电电极界面电荷注射特性对有机发光二极管性能的影响

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摘要

We investigated the charge injection properties of silver nanowire networks (AgNWs) in a compositelike structure with poly(23-dihydrothieno-l,4-dioxin)-poly(styrenesuîfonate) (PEDOT:PSS). The composite films acted as the anodes and hole transport layers (HTLs) in organic light-emitting diodes (OLEDs). The current density (J)-voltage (V)-Iuminance (L) characteristics and power efficiency (ε) of the OLEDs were measured to detennine their electrical and optical properties. The charge injection properties of the AgNWs in the OLEDs during operation were characterized via impedance spectroscopy (IS) by determining the variations in the capacitances (C) of the devices with respect to the applied V and the corresponding frequency (f). All measured results were compared with results for OLEDs fabricated on indium tin oxide (ITO) anodes. The OLEDs on AgNWs showed lower L and ε values than the OLEDs on ITO. It was also observed that AgNWs exhibit excellent charge injection properties and that the interfaces between the AgNWs and the HTL have very small charge injection barriers, resulting in an absence of charge carrier traps when charges move across these interfaces. However, in the AgNW-based OLED, there was a large mismatch in the number of injected holes and electrons. Furthermore, the highly conductive electrical paths of the AgNWs in the composite-like AgNW and PEDOT:PSS structure allowed a large leakage current of holes that did not participate in radiative recombination with the electrons; consequently, a lower ε was observed for the AgNW-based OLEDs than for the ITO-based OLEDs. To match the injection of electrons by the electron transport layer (ETL) in the AgNW-based OLED with that of holes by the AgNW/PEDOT:PSS composite anode, the electron injection barrier of the ETL was decreased by using the low work function polye-thylenimine ethoxylated (PEIE) doped with n-type cesium carbonate (Cs_2CO_3). With the doped-PEIE, the performance of the AgNW-based OLED was significantly enhanced through the balanced injection of holes and electrons, which clearly verified our analysis results by IS.
机译:我们研究了用聚(23-二氢硫噻吩-1,4-二恶英)-poly(丁烯索刚素)(PEDOT:PSS)的Compositelike结构中银纳米线网络(Agnws)的电荷注射特性。复合薄膜用作有机发光二极管(OLED)中的阳极和空穴传输层(HTL)。测量OLED的电流密度(j) - 电压(v)in-usiumance(l)特性和功率效率(ε)以确定它们的电气和光学性质。通过确定相对于所施加的V和相应的频率(F)的装置的电容(C)的变化来表征OLED中OLED中AgNW的电荷注射特性。将所有测量结果与在氧化铟锡(ITO)阳极上制造的OLED的结果进行比较。 AGNW上的OLED显示L和ε值比ITO上的OLED。还观察到,AGNWS表现出优异的电荷注入特性,并且AGNW和HTL之间的接口具有非常小的电荷注入屏障,导致电荷在这些接口上移动时不存在电荷载体陷阱。然而,在基于Agnw的OLED中,在注入的孔和电子的数量中存在大的不匹配。此外,复合材料类似AgNW和PEDOT中AgNW的高导电电路:PSS结构允许具有与电子辐射重组的孔的大漏电流;因此,对于基于AGNW的OLED而言,观察到较低的ε比ITO的OLED。为了使电子传输层(ETL)在基于AgNW / PEDOT的孔中的电子传输层(ETL)的喷射中匹配:PSS复合阳极,通过使用低功函数Polye来降低ETL的电子注入屏障 - 掺杂N型碳酸铯(CS_2CO_3)的二乙烯基胺乙氧基化(PEIE)。利用掺杂佩德,通过平衡的孔和电子注入,显着提高了基于Agnw的OLED的性能,这清楚地验证了我们的分析结果是。

著录项

  • 来源
    《Journal of Applied Physics》 |2017年第10期|105304.1-105304.10|共10页
  • 作者单位

    Department of Materials Science and Engineering Yonsei University 50 Yonsei-ro Seodaemun-gu Seoul 120-749 Korea;

    Department of Materials Science and Engineering Yonsei University 50 Yonsei-ro Seodaemun-gu Seoul 120-749 Korea;

    Department of Materials Science and Engineering Yonsei University 50 Yonsei-ro Seodaemun-gu Seoul 120-749 Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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