Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In_(0.5)Ga_(0.5)As/GaAs quantum dot heterostructures

摘要

Here, we propose a different approach for growing strain-coupled In0.5Ga0.5As quantum dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is done throughout the quantum dot (QD) heterostructures, which has a significant effect on the carrier probability density functions. The localization of the electron probability density function in each heterostructure has a strong correlation with the photoresponse. The confined electron wavefunction in the top QD layer of the optimized device heterostructure (trilayer QDIP having dot layer periodicity of three) would be useful for hyperspectral imaging applications owing to its narrow (8.67 meV) photoresponse. Rapid thermal annealing treatment was carried out on the trilayer QDIP to investigate the enhancement in its optoelectronic properties. The dark current density reduced by two orders, and the operating temperature increased by 30 degrees C for the 650 degrees C-annealed counterpart. Also, the responsivity enhanced by two times (2.05 A/W at -1 V) for the annealed QDIP.