Room temperature semiconductor detectors for nuclear security

摘要

Preventing radioactive sources from being used for harmful purposes is a global challenge. A requirement for solving the challenge is developing radiation detectors that are efficient, sensitive, and practical. Room temperature semiconductor detectors (RTSDs) are an important class of gamma-ray sensors because they can generate high-resolution gamma-ray spectra at ambient operating temperatures. A number of diverse and stringent requirements must be met for semiconducting materials to serve as sensors in RTSD spectrometers, which limits the number of candidates of interest that receive attention and undergo focused research and development efforts. Despite this, the development of new compounds for sensors in RTSDs is a thriving research field, and a number of materials with stunning potential as RTSD materials have emerged within the last decade. In this perspective, the state of the art in RTSD materials is examined, and emerging semiconducting compounds are reviewed. The highly developed CdTe, CdZnTe, HgI2, and TlBr are first discussed to highlight the potential that can emerge from RTSD compounds in advanced stages of technological development. Thereafter, emerging compounds are reviewed by class from chalcogenides, iodides and chalcohalides, and organic-inorganic hybrid compounds. This work provides both a compilation of the physical and electronic properties of the emerging RTSD candidates and a perspective on the importance of material properties for the future of compounds that can transform the field of radiation detection science.