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First-principles prediction of two hexagonal silicon crystals as potential absorbing layer materials for solar-cell application

机译:两种六角形硅晶体作为太阳能电池应用的潜在吸收层材料的第一性原理预测

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Based on first-principles calculations, the structures, stabilities, electronic properties, and mechanical properties as well as optical properties of two new hexagonal silicon allotropes (Hex-193 and Hex-194) were theoretically investigated. Both Hex-193 and Hex-194 are confirmed to be meta-stable phases with energetic stability exceeding the previously proposed Si-20 and the experimentally viable Si-24. They are also confirmed to be dynamically and elastically stable silicon phases according to their calculated phonon band structures and mechanical properties. The HSE06-based band structures of Hex-193 and Hex-194 indicate that they are quasi-direct bandgap semiconductors with fundamental bandgaps of 1.275 eV (direct bandgap is 1.277 eV) and 1.200 eV (direct bandgap is 1.302 eV), respectively. Further investigation of the optical properties shows that both Hex-193 and Hex-194 exhibit a stronger absorption coefficient in comparison to that of diamond silicon, which indicates that both are potential materials for solar-cell application. Published by AIP Publishing.
机译:在第一性原理计算的基础上,理论上研究了两种新型六方硅同素异形体(Hex-193和Hex-194)的结构,稳定性,电子性质和机械性质以及光学性质。已证实Hex-193和Hex-194均为亚稳态相,其能量稳定性超过了先前提出的Si-20和实验上可行的Si-24。根据它们计算的声子带结构和机械性能,它们也被证实是动态和弹性稳定的硅相。基于HSE06的Hex-193和Hex-194的能带结构表明它们是准直接带隙半导体,其基本带隙为1.275 eV(直接带隙为1.277 eV)和1.200 eV(直接带隙为1.302 eV)。光学性能的进一步研究表明,与金刚石硅相比,Hex-193和Hex-194均具有更强的吸收系数,这表明两者都是潜在的太阳能电池应用材料。由AIP Publishing发布。

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