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首页> 外文期刊>Journal of Applied Physics >Nanostructural and electrical properties of functionally terminated self-assembled monolayers on silicon surfaces
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Nanostructural and electrical properties of functionally terminated self-assembled monolayers on silicon surfaces

机译:硅表面上功能终止的自组装单分子层的纳米结构和电学性质

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Self-assembled monolayers (SAMs) having alkyl chains with typically 18 CH_2 units and with different functional end groups (methyl, thiol, thiophene, phenoxy, and biphenyl) have been attached to hydroxylated (100) silicon surfaces. Their layer structure has been studied using grazing incidence x-ray reflectometry. An excellent data analysis is possible on the basis of a two layer model. One layer with constant thickness (about 10.8 A) for all the SAMs investigated is associated with the alkyl chain/silicon interface, whereas the second layer is associated with the functional end group. Its dimension changes with the size and nature of the end group. The layer dimension increases from about 22 A for the smallest end group (methyl) to about 32 A for the largest one (biphenyl). The experimental layer thickness values are in good agreement with those expected from molecular modeling. The electrical properties of the SAM layers have been studied using Au/Al contacts deposited on the functional end groups. Of particular interest are the insulating properties of the alkyl chain and the breakdown voltages which exhibit very high values of typically 16 MV/cm. A lateral in-plane conductance along the end groups has been measured in the case of an I_2-doped biphenyl end group. Iodine doping can increase the conductivity by a factor of 12-14. This suggests the possibility of a nanomolecular transistor with the functional end group as an active layer without any additional deposition of an organic conducting layer on the SAM dielectric layer.
机译:具有烷基链(通常具有18个CH_2单元)和不同官能端基(甲基,硫醇,噻吩,苯氧基和联苯)的自组装单分子层(SAMs)已连接到羟基化(100)的硅表面。已经使用掠入射X射线反射法研究了它们的层结构。基于两层模型,可以进行出色的数据分析。对于所研究的所有SAM,具有恒定厚度(约10.8 A)的一层与烷基链/硅界面相关,而第二层与功能性端基相关。其尺寸随端基的大小和性质而变化。层的尺寸从最小端基(甲基)的约22 A增加到最大端基(联苯)的约32A。实验层的厚度值与分子建模所期望的相符。已经使用沉积在功能端基上的Au / Al触点研究了SAM层的电性能。特别令人感兴趣的是烷基链的绝缘性能和击穿电压,它们表现出非常高的值,通常为16 MV / cm。在I_2掺杂联苯端基的情况下,已经测量了沿着端基的横向面内电导。碘掺杂可以使电导率提高12-14倍。这表明具有功能性端基作为活性层的纳米分子晶体管的可能性,而不会在SAM介电层上额外沉积有机导电层。

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