首页> 外文期刊>Journal of Applied Physics >Structural, electrical, magnetic, and electronic structure studies of PrFe_(1-x)Ni_xO_3 (x≤0.5)
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Structural, electrical, magnetic, and electronic structure studies of PrFe_(1-x)Ni_xO_3 (x≤0.5)

机译:PrFe_(1-x)Ni_xO_3(x≤0.5)的结构,电,磁和电子结构研究

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We report the x-ray absorption studies on O K, Fe L_(3,2), Ni L_(3,2), and Pr M_(5,4) edges in PrFe_(1-x)Ni_xO_3 along with their structural, electrical transport, and magnetization characterizations. All the samples are in single phase having orthorhombic structure with space group Pnma for x≤ 0.4. Ni doping at Fe site brings the system in the conducting regime, resistivity decreases from GΩ cm to 260 mΩ cm at room temperature, and the magnetic ordering is stabilized. The temperature dependent resistivity follows the semiconducting behavior and fits well with Greaves' variable range hopping model. The gap parameter is reduced from 2 to 0.118 eV. The materials are in weak ferromagnetic state and magnetization is gradually decreasing with the enhancement of Ni substitution, whereas magnetic anisotropy is reduced substantially. A new feature about 2.0 eV lower than the pre-edge of PrFeO_3 in O K edge is observed with Ni substitution at Fe site due to the 3d contraction effect and is growing with the increase of Ni substitution. From 2p edges (L_(3,2) edges) of Fe and Ni, it is confirmed that both are in trivalent state and Ni is in mixed spin state with 3d~7 (_(2g)~5,e_g~2 and t_(2g)~6,e_g~1) configuration in ground state. The trivalent state of Pr is confirmed by x-ray absorption spectroscopy of Pr at M_(5,4) edges. These observations have been explained on the basis of charge carrier doping in PrFeO_3 with the Ni substitution. The disorder induced localization is found to control the conductivity and magnetism in the present materials. The controlled doping of carriers in semiconducting regime and ferromagnetism propose these materials as a promising candidate for the spintronic applications.
机译:我们报告了OK,Fe L_(3,2),Ni L_(3,2)和Pr M_(5,4)PrFe_(1-x)Ni_xO_3边缘的X射线吸收研究及其结构,电学特性运输和磁化特性。所有样品均为具有正交结构的单相,其中x≤0.4的空间群为Pnma。 Ni处的Fe掺杂使系统处于导电状态,室温下电阻率从GΩcm减小到260mΩcm,并且磁序稳定。与温度相关的电阻率遵循半导体行为,并且与Greaves的可变范围跳变模型非常吻合。间隙参数从2降低到0.118 eV。这些材料处于弱铁磁状态,并且随着Ni置换的增加,磁化强度逐渐降低,而磁各向异性却大大降低。由于3d收缩效应,在Fe处有Ni取代,观察到一个比Ok边缘的PrFeO_3的前缘低约2.0 eV的新特征,并且随着Ni取代的增加而增加。从Fe和Ni的2p边缘(L_(3,2)边缘)可以确定,它们都处于三价状态,Ni处于3d〜7(_(2g)〜5,e_g〜2和t_ (2g)〜6,e_g〜1)处于接地状态。 Pr的三价态通过X射线吸收光谱在M_(5,4)边缘确认。这些观察已经基于在具有Ni取代的PrFeO_3中的载流子掺杂的基础上进行了解释。发现无序诱导的局部化可控制本发明材料中的电导率和磁性。在半导体状态和铁磁性下对载流子的受控掺杂提出了这些材料作为自旋电子学应用的有希望的候选者。

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