Characterization of Mn-doped 3C-SiC prepared by ion implantation

摘要

The characterization of Mn-doped 3C-SiC prepared by ion implantation is reported. Implantation of Mn ions at a dose of 1 X 10~(16) cm~(-2) into a 3C-SiC homoepitaxial wafer was carried out. High temperature annealing following the implantation process was found to enhance the ferromagnetic ordering. Transmission magnetic circular dichroism and magnetization investigations demonstrated a ferromagnetic behavior below 245 K. The lattice relaxation induced by the postannealing is considered a possible mechanism of this outcome.