...
首页> 外文期刊>Journal of Applied Physics >Role of substrate bias on the magnetic properties and microstructure of CoCrPt:SiO_2 perpendicular recording media
【24h】

Role of substrate bias on the magnetic properties and microstructure of CoCrPt:SiO_2 perpendicular recording media

机译:衬底偏压对CoCrPt:SiO_2垂直记录介质的磁性和微观结构的作用

获取原文
获取原文并翻译 | 示例
           

摘要

The role of substrate bias during the sputter deposition of various layers of double-layered CoCrPt-SiO_2 perpendicular recording media has been investigated in order to understand the physical mechanisms behind the various effects observed. Perpendicular recording media with dual Ru intermediate layers were investigated using several magnetic and microstructural characterization techniques. It was observed that, in general, the application of a bias voltage during the deposition of the seedlayer (Ta) and the first intermediate layer (Ru) is helpful in reducing the c-axis dispersion of the recording layer. For the other layers, application of bias voltage leads to deterioration in the magnetic properties. It was also observed that the application of a bias voltage during the deposition of the first intermediate layer (especially Ru) may not enhance the preferred growth of Ru hexagonal-close-packed (00.2) planes parallel to the disk surface, as predicted before. However, the bias voltage on the Ru layer still reduces the c-axis dispersion of the magnetic layer. From the omega-offset x-ray diffraction investigations, it is estimated that the lattice parameter "a" of the Ru layer is reduced slightly with bias voltage, which could probably lead to a reduction in the lattice mismatch between the Ru layer and Co-alloy layer. Bias conditions also could lead to improved interface condition. Such an improvement in the lattice matching or interface conditions could probably be the cause of the reduction of c-axis dispersion of the recording layer.
机译:为了理解所观察到的各种效应背后的物理机制,已经研究了在双层CoCrPt-SiO_2垂直记录介质的各个层的溅射沉积过程中衬底偏压的作用。使用多种磁性和微观结构表征技术研究了具有双Ru中间层的垂直记录介质。观察到,通常,在种子层(Ta)和第一中间层(Ru)的沉积期间施加偏置电压有助于减小记录层的c轴色散。对于其他层,施加偏置电压导致磁性能下降。还观察到,如先前所预测的,在第一中间层(特别是Ru)的沉积期间施加偏压可能不会增强平行于磁盘表面的Ru六角密堆积(00.2)平面的优选生长。然而,Ru层上的偏置电压仍然减小了磁性层的c轴色散。根据欧米伽偏移X射线衍射研究,估计Ru层的晶格参数“ a”随偏置电压而略有降低,这可能会导致Ru层和Co-之间的晶格失配降低。合金层。偏置条件也可能导致界面条件的改善。晶格匹配或界面条件的这种改善可能是记录层的c轴色散减少的原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号