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首页> 外文期刊>Journal of Applied Physics >Electric Field Dependence Of Quantum Efficiencies Of Ag-si Composites In The Infrared At Room Temperature
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Electric Field Dependence Of Quantum Efficiencies Of Ag-si Composites In The Infrared At Room Temperature

机译:Ag / n-si复合材料在室温下红外光谱效率的电场依赖性

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Room temperature quantum efficiencies of 2 μm thick Ag-Si composite films as a function of electric field are calculated for incident radiation wavelengths of 3, 5, 8, and 14 μm using a previously derived formula. With energies smaller than the Ag-Si Schottky barrier height, the signal current is carried by electrons tunneling through the barrier. For composites with Ag particle size of 5 nm, in an applied electric field of 2 × 10~6 V/cm, the quantum efficiencies are between 10% and 35%, depending on the wavelength. They increase rapidly with electric field and asymptotically approach a large fraction of the absorbed incident radiation in the Ag particles.
机译:使用先前推导的公式,针对3、5、8和14μm的入射辐射波长,计算了2μm厚的Ag / n-Si复合膜的室温量子效率与电场的关系。当能量小于Ag-Si肖特基势垒高度时,信号电流由隧穿势垒的电子传输。对于Ag粒径为5 nm的复合材料,在2×10〜6 V / cm的施加电场中,取决于波长,量子效率在10%到35%之间。它们随着电场迅速增加,并且渐近地接近Ag颗粒中吸收的大部分入射辐射。

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