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首页> 外文期刊>Journal of Applied Physics >Formation of (Ti, AI)N/Ti_2AIN multilayers after annealing of TiN/TiAI(N) multilayers deposited by ion beam sputtering
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Formation of (Ti, AI)N/Ti_2AIN multilayers after annealing of TiN/TiAI(N) multilayers deposited by ion beam sputtering

机译:通过离子束溅射沉积的TiN / TiAI(N)多层退火后形成(Ti,AI)N / Ti_2AIN多层

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摘要

By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths (A = 8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 ℃ in vacuum, one obtains for A= 13 nm a (Ti, Al)N/Ti_2AlN mul
机译:通过使用离子束溅射,在室温下将各种调制波长(A = 8、13和32 nm)的TiN / TiAl(N)多层沉积到硅基板上。在真空中于600℃退火后,获得A = 13 nm的a(Ti,Al)N / Ti_2AlN mul

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