Photoelectric effects of ultraviolet fast response and high sensitivity in LiNbO_3 single crystal

摘要

The photoelectric effects in LiNbO_3 (LNO) single crystal have been systematically studied with the two kinds of LNO wafers of tilt of 10° and untilted at the ambient temperature. The ultrafast response photoelectric effect of 120 ps rise time was observed in 10° tilted LNO single crystal with a 266 nm laser pulse of 25 ps duration. The photocurrent responsivity of untilted LNO with an interdigitated electrode of 10 μm finger width and 10 μm interspacing is 17.1 mA/W under the irradiation of 300 nm wavelength UV light at 10 V bias. The noise current under sunlight is only 73 pA at 10 V bias. The experimental results suggest that the LNO single crystal is one of the promising materials for photodetectors working in UV region.