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首页> 外文期刊>Journal of Applied Physics >Ferromagnetic resonance properties and anisotropy of Ni-Mn-Ga thin films of different thicknesses deposited on Si substrate
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Ferromagnetic resonance properties and anisotropy of Ni-Mn-Ga thin films of different thicknesses deposited on Si substrate

机译:Si衬底上沉积不同厚度Ni-Mn-Ga薄膜的铁磁共振特性和各向异性

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摘要

Ni-Mn-Ga films of different thicknesses were deposited onto Si(100) substrates by magnetron sputtering and annealed at 1073 K for 1 h in high vacuum. X-ray diffraction analysis showed the formation of 220 fiber texture perpendicular to the film plane. Magnetic properties of thin films were investigated at room temperature using ferromagnetic resonance (FMR) technique. The dependencies of both the FMR absorption maximum position and resonance linewidth on the direction of the external magnetic field with respect to the film normal were studied. The data analysis showed that the direction of magnetocrystalline anisotropy easy axis in the films makes 45° angle with the film normal. The modeling allowed evaluation of the uniaxial anisotropy constant, which is found to increase with thickness of Ni-Mn-Ga films. Uniaxial anisotropy constants were found to be ~2.8 × 10~5 erg/cm~3 for 0.1 and 0.5 μm film thickness, ~4.2 × 10~5 erg/cm~3 for 1 ×μm film, and ~5.1 × 10~5 erg/cm~3 for 3 μm film.
机译:通过磁控溅射将不同厚度的Ni-Mn-Ga膜沉积到Si(100)衬底上,并在高真空下以1073 K退火1 h。 X射线衍射分析显示垂直于膜平面形成220纤维纹理。使用铁磁共振(FMR)技术在室温下研究了薄膜的磁性。研究了相对于薄膜法线,FMR吸收最大位置和共振线宽对外部磁场方向的依赖性。数据分析表明,薄膜中的磁晶各向异性易轴方向与薄膜法线成45°角。通过建模,可以评估单轴各向异性常数,该常数随Ni-Mn-Ga膜厚度的增加而增加。对于0.1和0.5μm的膜厚,发现单轴各向异性常数约为2.8×10〜5 erg / cm〜3,对于1×μm的膜厚约为4.2×10〜5 erg / cm〜3,并且约为5.1×10〜5 erg / cm〜3(对于3μm膜)。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第2期|467-469|共3页
  • 作者单位

    Institute of Magnetism, NASU and MESU, 36-B Vernadsky str., Kiev, 03143, Ukraine;

    Department of Physics, Boise State University, 1910 University Drive, Boise, Idaho 83725-1570, USA;

    Institute of Magnetism, NASU and MESU, 36-B Vernadsky str., Kiev, 03143, Ukraine;

    Department of Materials Science and Engineering, Boise State University, 1910 University Drive, MS 2075, Boise, Idaho 83725, USA;

    Department of Physics, Boise State University, 1910 University Drive, Boise, Idaho 83725-1570, USA;

    IMRAM, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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