机译:电极效应引起的漏电介质/氧化物半导体中类似于弛豫铁电的高效介电常数:以CuO陶瓷为例
Department of Engineering Materials, Ceramics and Composites Laboratory, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield SI 3JD, United Kingdom;
Department of Engineering Materials, Ceramics and Composites Laboratory, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield SI 3JD, United Kingdom;
Department of Engineering Materials, Ceramics and Composites Laboratory, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield SI 3JD, United Kingdom;
机译:<![CDATA [CR掺杂CA
机译:通过(Nb Plus Al)共掺杂金红石TiO2巨大漏洞陶瓷偶联伴随的供体 - 受体离子偶联诱导的低介电损失
机译:带有富钽电极的La_2O_3封端的HfSiON高介电常数n型金属氧化物半导体场效应晶体管器件的可靠性研究
机译:金属有机化学气相沉积高介电常数TiO / sub 2 /介电金属氧化物半导体场效应晶体管的电应力效应
机译:适用于未来规模化技术的高介电常数电介质和高迁移率半导体:氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
机译:高介电常数二氧化钛陶瓷基板的研制与表征
机译:类弛豫和铁电体锶钡钡的铁电和介电特性研究
机译:半导体电化学方法研究镍电极上的氧化膜。总结报告