机译:在邻近蓝宝石衬底上生长的In_(0.2)Ga_(0.8)N / GaN多量子阱的载流子定位度
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
机译:在SiO_2图案邻域(001)GaAs衬底上形成GaAs线结构和位置控制的In_(0.8)Ga_(0.2)As量子点
机译:GaAs(221)A衬底上自组织In_(0.2)Ga_(0.8)As量子线中的弱定位和自旋轨道相互作用
机译:通过MOCVD生长的In_(0.2)Ga_(0.8)As / GaAs应变多量子阱的光学性质
机译:具有复合IN_(0.8)GA_(0.2)的变形HFET,如GaAs衬底上的通道/ INA / IN_(0.8)GA_(0.2)
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:形成蓝色LED八周期In0.2Ga0.8N / GaN量子阱的软约束电势的生长顺序中的量子势垒的最佳硅掺杂层。
机译:GaN,In_(0.05)Ga_(0.95)N和a中的超快载流子弛豫 In_(0.05)Ga_(0.95)/ In_(0.15)Ga_(0.85)N多量子阱