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机译:从紫外到绿色发射的基于AllnGaN的激光二极管的限制因子和吸收损耗
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
机译:溅射的AIN缓冲层对基于AllnGaN的蓝色和近紫外发光二极管的影响
机译:基于二极管激光器和发光二极管的毛细管电泳简单双光束吸收检测系统
机译:蓝紫色发射激光二极管InGaN光学限制层厚度的光损耗变化测量
机译:通过注入载流子的吸收损耗调制来测量激光二极管中的限制因子
机译:基于AlGaN合金的紫外线电吸收调制器和发光二极管的开发
机译:基于氮化铟镓的紫外蓝色和绿色发光二极管具有浅周期性孔图案
机译:基于氮化镓的紫外线紫外线,蓝色和绿色发光二极管,具有浅周期孔图案的官能化
机译:基于宽带隙II-VImaterials的蓝绿色发光二极管和激光器