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首页> 外文期刊>Journal of Applied Physics >Investigation of defects by admittance spectroscopy measurements in poly (3-hexylthiophene):(6,6)-phenyl C_(61)-butyric acid methyl ester organic solar cells degraded under air exposure
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Investigation of defects by admittance spectroscopy measurements in poly (3-hexylthiophene):(6,6)-phenyl C_(61)-butyric acid methyl ester organic solar cells degraded under air exposure

机译:暴露于空气中降解的聚(3-己基噻吩):( 6,6)-苯基C_(61)-丁酸甲酯有机太阳能电池中通过导纳光谱法测量缺陷的研究

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摘要

Electrical transport properties of poly (3-hexylthiophene) (P3HT) (6,6)-phenyl C_(61)-butyric acid methyl ester (PCBM) solar cells, with and without encapsulation, have been investigated and analyzed using admittance spectroscopy and capacitance voltage measurements at different temperatures. The admittance spectroscopy clearly reveals two defect states with activation energies of 53 and 100 meV, and a concentration ten times higher in the unencapsulated sample. These defects seem to have a strong effect on the charge transport and the solar cell performance when they are present with a high concentration, since they lead to a decrease of the mobility and also the short-circuit current and the efficiency. The origin of these defects has been assigned to reaction of the blend with O_2 which is also known to induce p-type doping in pure P3HT. In an attempt to understand the effect of these defects on the organic solar cell performance, modeling and simulation were carried out using the effective medium layer model and gave good agreement with the measurements results.
机译:使用导纳光谱法和电容法研究和分析了聚(3-己基噻吩)(P3HT)(6,6)-苯基C_(61)-丁酸甲酯(PCBM)太阳能电池的电传输性能在不同温度下的电压测量。导纳光谱清楚地揭示了两种缺陷状态,其活化能分别为53和100 meV,未封装样品中的浓度高十倍。当它们以高浓度存在时,这些缺陷似乎对电荷传输和太阳能电池性能具有强烈的影响,因为它们导致迁移率的降低以及短路电流和效率的降低。这些缺陷的来源已被归因于共混物与O_2的反应,而O_2也已知会在纯P3HT中诱导p型掺杂。为了理解这些缺陷对有机太阳能电池性能的影响,使用有效的介质层模型进行了建模和仿真,并与测量结果很好地吻合。

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  • 来源
    《Journal of Applied Physics》 |2011年第9期|p.094509.1-094509.9|共9页
  • 作者单位

    Department of Electronics and Information Systems (ELIS), University of Gent, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium;

    Department of Electronics and Information Systems (ELIS), University of Gent, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium;

    Department of Solid State Sciences, University of Gent, Krijgslaan 281-SI, B-9000 Gent, Belgium;

    Department of Solid State Sciences, University of Gent, Krijgslaan 281-SI, B-9000 Gent, Belgium;

    Institute of Materials Research, University of Hasselt, Wetenschapspark 1, B-3590 Diepenbeek, Belgium;

    Institute of Materials Research, University of Hasselt, Wetenschapspark 1, B-3590 Diepenbeek, Belgium;

    Institute of Materials Research, University of Hasselt, Wetenschapspark 1, B-3590 Diepenbeek, Belgium;

    Laboratory of Physics of Semiconductors Devices (LPDS), University of Bechar, Po Box 417, Bechar 08000, Algeria;

    Department of Electronics and Information Systems (ELIS), University of Gent, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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