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机译:具有低于20 // A的开关电流和渐变电阻调制的低功率TiN / AI_2O_3 / Pt电阻开关器件
Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, California, 94305, USA;
Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, California, 94305, USA;
Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, California, 94305, USA;
Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, California, 94305, USA;
机译:Ni / Si3N4 / n(+)-Sin电阻切换存储器件中的逐步双极电阻切换,用于高密度集成和n低功耗应用
机译:具有各种顺应电流的Ti / AI_2O_3 / Pt与TiN / AI_2O_3 / Pt RRAM器件之间的开关特性比较
机译:电极退火在基于PbS微型/纳米线的电阻随机存取存储器中通过表面退火诱导的电阻开关调制
机译:基于AlOx的具有逐步电阻调制的电阻开关器件,用于神经形态设备
机译:具有放大切换和调制功能的电光聚合物基单片波导器件。
机译:HtO2 / TiO2 / HfO2三层结构RRAM器件在原子层沉积制备的Pt和TiN涂层衬底上的双极电阻转换特性
机译:石墨烯 - 有机装置的电阻切换:石墨烯 - 有机装置的电荷传输性能通过电场诱导光学二次谐波产生和电荷调制光谱
机译:高增益Gaas光电导半导体开关(pCss):器件寿命,高电流测试,光脉冲发生器