机译：Si（111）上Bi_2Se_3拓扑绝缘体薄膜的外延生长
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA,Materials Engineering and Centre for Microcopy and Microanalysis, University of Queensland,Brisbane QLD 4072, Australia;
Advanced Light Source Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley,CA 94720, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
Department of Physics, University of California, Riverside, California 92521, USA;
Materials Engineering and Centre for Microcopy and Microanalysis, University of Queensland,Brisbane QLD 4072, Australia;
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;
机译：具有原子尖锐界面的Si（111）拓扑绝缘体Bi_2Se_3薄膜的外延生长
机译：Si（111）上外延拓扑绝缘体Bi_2Se_3薄膜的应变状态，薄膜和表面形态
机译：Si（111）上拓扑绝缘体Bi_2Se_3的外延生长：生长模式，晶格参数和应变状态
机译：激光能量密度对高度取向拓扑绝缘体生长的作用Bi_2se_3薄膜
机译：银（001）和银（111）上超薄外延铬和氧化铁膜的生长和结构：通过X射线光电子衍射和低能电子衍射完成的综合研究。
机译：Si（111）衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
机译：Si（111）上Bi2Se3拓扑绝缘体薄膜的外延生长
机译：组分扩散生长和Kondo绝缘子smB6薄膜的稳健拓扑表面状态。
