Response to 'Comment on 'Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses'' [J. Appl. Phys. 112,076101]

摘要

In our opinion, there are a number of inconsistencies in the Comment by Basile and Mooney. These include the significance of the donor response in the formation of a dip in the low temperature C-V characteristics, the degree to which the donors respond to the ac signal at low temperature, and the explanation of the low temperature broadening as resulting from interface state response.