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Magnetic properties of antiferromagnetically coupled antidots of Co/Pd multilayers

机译:Co / Pd多层反铁磁耦合解毒剂的磁性

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摘要

Antidots of Co/Pd multilayers with 3-bilayers [(Co/Pd)_(x3)] that were antiferromagnetically coupled (AFC) to (Co/Pd)_(x10) were fabricated and their magnetic properties were investigated. The thickness of Co in (Co/Pd)_(x3) was varied from 0.4 to 0.8 nm. Samples with a Co thickness of 0.8 nm in the bilayer showed a perpendicular magnetic anisotropy (PMA) when antiferromagnetically coupled to (Co/Pd)_(x10). On the other hand, the magnetization direction of single Co/Pd multilayers with thick Co (0.8 nm) as a reference structure (without AFC) was observed to be in plane, indicating that the PMA in (Co/Pd)_(x3) films with thicker Co is due to the antiferromagnetic coupling. We also carried out a systematic study on this set of thin films patterned in antidot array fabricated using nanoim-print lithography. It was found that the AFC is helpful to induce a perpendicular magnetic anisotropy in both thin film and antidot form. Such a result is interesting both from a fundamental viewpoint and also from their potential applications in spintronics devices and patterned magnetic medium.
机译:制备了具有三层[(Co / Pd)_(x3)]的Co / Pd多层的解毒剂,该三层反铁磁耦合了(AFC)到(Co / Pd)_(x10),并研究了它们的磁性。 (Co / Pd)_(x3)中的Co厚度在0.4到0.8 nm之间变化。双层中Co厚度为0.8 nm的样品在反铁磁耦合到(Co / Pd)_(x10)时显示出垂直磁各向异性(PMA)。另一方面,观察到具有厚Co(0.8 nm)作为参考结构(无AFC)的单个Co / Pd多层的磁化方向在平面内,表明PMA在(Co / Pd)_(x3) Co较厚的薄膜是由于反铁磁耦合造成的。我们还对使用nanoim-print光刻技术制造的以点阵阵列图案化的这组薄膜进行了系统研究。已经发现,AFC有助于以薄膜形式和解毒剂形式引起垂直磁各向异性。从基本观点以及从其在自旋电子器件和图案化磁介质中的潜在应用来看,这种结果都是令人感兴趣的。

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  • 来源
    《Journal of Applied Physics》 |2012年第2期|p.07B916.1-07B916.3|共3页
  • 作者单位

    Data Storage Institute, (A~*STAR) Agency for Science, Technology and Research, 117608 Singapore;

    Data Storage Institute, (A~*STAR) Agency for Science, Technology and Research, 117608 Singapore,Electrical and Computer Engineering Department, National University of Singapore, 117576 Singapore;

    Data Storage Institute, (A~*STAR) Agency for Science, Technology and Research, 117608 Singapore;

    Data Storage Institute, (A~*STAR) Agency for Science, Technology and Research, 117608 Singapore;

    Data Storage Institute, (A~*STAR) Agency for Science, Technology and Research, 117608 Singapore;

    Data Storage Institute, (A~*STAR) Agency for Science, Technology and Research, 117608 Singapore,Electrical and Computer Engineering Department, National University of Singapore, 117576 Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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